creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 200 v v rms 24 31 35 42 63 70 105 140 v v dc 35 45 50 60 90 100 150 200 v i f(av) a i rrm a dv/dt v/ s r jc o c/w t j o c t stg o c document number: d1308015 version: l13 mbrf1035ct thru MBRF10200CT dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mbrf 10150 ct mbrf 10200 ct unit ito-220ab a mechanical data case: ito-220ab polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) a maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 10 maximum ratings and electrical characteristics (t a =25 unless otherwise noted) maximum repetitive peak reverse voltage mbrf 1060 ct mbrf 1090 ct mbrf 10100 ct 0.70 peak repetitive forward current (rated vr, square wave, 20khz) i frm 10 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 120 maximum reverse current @ rated vr t j =25 t j =125 i r ma v peak repetitive reverse surge current (note 1) 0.5 maximum instantaneous forward voltage (note 2) i f = 5 a, t j =25 i f = 5 a, t j =125 i f = 10 a, t j =25 i f = 10 a, t j =125 v f voltage rate of change (rated v r ) 10000 typical thermal resistance 3.5 operating junction temperature range - 55 to +150 storage temperature range - 55 to +150 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle taiwan semiconductor parameter symbol mbrf 1035 ct mbrf 1045 ct mbrf 1050 ct 0.85 0.88 0.80 0.85 0.88 0.57 0.65 0.75 0.78 15 10 5 0.1 0.80 0.90 0.95 0.98 0.67 0.75
part no. part no. mbrf1060ct mbrf1060ct mbrf1060ct (ta=25 unless otherwise noted) document number: d1308015 version: l13 example mbrf1035ct thru MBRF10200CT taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing preferred p/n aec-q101 qualified packing code green compound code description mbrf1060ct c0 c0 c0 g green compound mbrf1060cthc0 h c0 aec-q101 qualified ratings and characteristics curves note 1: "xx" defines voltage from 35v (mbrf1035ct) to 200v (MBRF10200CT) mbrf10xxct (note 1) prefix "h" c0 suffix "g" ito-220ab 50 / tube mbrf1060ct c0g 0 5 10 15 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductive load with heatsink 0 25 50 75 100 125 150 0 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=75 tj=125 tj=25 0.1 1 10 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg pulse width=300 s 1% duty cycle mbrf10150ct - 10200ct mbrf1090ct - 10100ct mbrf1050ct - 1060ct mbrf1035ct - 1045ct
creat by art min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: d1308015 version: l13 marking diagram mbrf1035ct thru MBRF10200CT taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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